発表論文、受賞・助成など

発表論文

Google Scholor Citations

  1. G. Li, T. Maruyama, and K. Iiyama "Over 10 GHz Lateral Silicon Photodetector Fabricated on Silicon-on-insulator Substrate by CMOS-compatible Process," Jpn. J. Appl. Phys., vol. 54, no. 4S, pp. 04DG06(4 pages), Mar. 2015.
  2. H. Morino, T. Maruyama, and K. Iiyama "Reduction of Wavelength Dependence of Coupling Characteristics Using Si Optical Waveguide Curved Directional Coupler," J. Lightwave Technol., vol. 32, no. 12, pp. 2188-2192, Jun. 2014.
  3. G. Li, T. Maruyama, and K. Iiyama "Low-propagation-loss Ta2O5 Optical Waveguides on Silica Substrate," Jpn. J. Appl. Phys., vol. 53, no. 4S, pp. 04EG12(4 pages), Mar. 2014.
  4. K. Maekita, T. Maruyama, K. Iiyama, and T. Suzuki, "GHz Response of Metamorphic InAlAs Metal-semiconductor-metal Photodetector on GaAs Substrate," Jpn. J. Appl. Phys., vol. 53, no. 2S, pp. 02BC16(5 pages), Feb. 2014.
  5. G. Li, Y. Hashimoto, T. Maruyama, and K. Iiyama, "High-efficiency Optical Coupling to Planar Photodiode using Metal Reflector loaded Waveguide Grating Coupler," Opt. Quantum Electron., vol. 45, no. 7, pp. 657-663, Jul. 2013.
  6. S. Arai, N. Nishiyama, T. Maruyama, and T Okumura, "GaInAsP/InP Membrane Lasers for Optical Interconnects," IEEE J. Sel. Top. Quantm Electron., vol. 17, no. 5, pp. 1381-1389, Sep./Oct. 2011.
  7. K. Iiyama, S.-I. Matsui, T. Koabayashi and T. Maruyama, "High-resolution FMCW reflectometry using a single-mode vertical-cavity surface-emitting laser," IEEE Photon. Technol. Lett., vol. 23, no. 11, pp. 703-705, Jun. 2011.
  8. K. Iiyama, T. Ishida, Y. Ono, T. Maruyama and T. Yamagishi, "Fabrication and characterization of amorphous polyethylene terephthalate optical waveguides," IEEE Photon. Technol. Lett., vol. 23, no. 5, pp. 275-277, Mar. 2011.
  9. K. Iiyama, H. Takamatsu and T. Maruyama, "Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18 μm CMOS process," IEEE Photon. Technol. Lett., vol. 22, no. 12, pp. 932-934, Jun. 2010.
  10. T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama, T. Maruyama and S. Arai, "Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits," Opt. Express, vol. 17, no. 15, pp. 12564-12570, Jul. 2009.
  11. M. Inamoto, T. Maruyama and K. Iiyama, "Mach-Zehnder interferometric optical switch with MEMS phase shifter ," Opt. Quantum Electron., vol. 41, no. 8, pp. 599-604, Jun. 2009.
  12. S. Arai and T. Maruyama, "GaInAsP/InP quantum wire lasers," J. Sel. Top. Quantum Electron. vol. 15, no. 3, pp. 731-742, May/Jun. 2009.
  13. K. Inoue, D. Plumwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai, "Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60," Jpn. J. Appl. Phys. vol. 48, no. 3, pp. 030208(3pages), Mar. 2009.
  14. T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama and S. Arai, "Injection-type GaInAsP-InP-Si distributed-feedback laser directly bonded on silicon-on-insulator substrate," IEEE Photon. Technol. Lett., vol. 21, no. 5, pp. 283-285, Mar. 2009.
  15. D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai "Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP quantum-wire structures," Jpn. J. Appl. Phys. vol. 47, no. 5 pp 3735-3741, May 2008.
  16. T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto and S. Arai, "Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure," Jpn. J. Appl. Phys., vol. 46, no. 48, pp. L1206 - L1208, Dec. 2007.
  17. H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama and S. Arai, "GaInAsP/InP membrane BH-DFB laser with air-bridge structure," Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1158 - L1160, Nov. 2007.
  18. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama and S. Arai, "85 ºC continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding Layer," Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1155 - L1157, Nov. 2007.
  19. D. Plumwongrot, Y. Nishimoto, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai, "Bragg wavelength detuning in GaInAsP/InP DFB lasers with wirelike active regions," Jpn. J. Appl. Phys., vol. 46, no. 45, pp. L1090 - L1092, Nov. 2007.
  20. H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama and S. Arai, "Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth," J. Appl. Phys., vol. 102, no. 9 pp. 093509-1-093509-5, Nov. 2007.
  21. S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama and S. Arai, "Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating," IEEE J. Sel. Topics Quantum. Electron., vol. 13, no. 5, pp. 1135-1141, Dec. 2007.
  22. Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, "High T0 operation of 1590 nm GaInAsP/InP quantum-wire distributed feedback lasers by Bragg wavelength detuning," Jpn. J. Appl. Phys., vol. 46, no. 17, pp. L411-L413, Apr. 2007.
  23. S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai, "Reduced temperature dependence of lasing wavelength in membrane BH-DFB lasers with polymer cladding layers," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 291-293, Mar. 2007.
  24. Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai, "Low-threshold current density GaInAsP/InP quantum-wire distributed feedback lasers fabricated by low-damage processes," Jpn. J. Appl. Phys., vol. 46, no. 2, pp. L34-L36, Feb. 2007.
  25. T. Maruyama, T. Okumura and S. Arai, "Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate," Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8717-8718, Nov. 2006.
  26. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura,Y. Nishimoto and S. Arai, "GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate," Optics Express, vol. 16, no. 14, pp. 8184-8188, Sep. 2006.
  27. H. Yagi, K. Miura, Y. Nishimoto, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, "Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions," Appl. Phys. Lett., vol. 87, no. 22, pp. 223120-1-223120-3, Nov. 2005.
  28. H. Yagi, T. Sano, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai, GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors," IEICE Electronics Express, vol. 1, no. 17, pp. 540-544, Dec. 2004.
  29. A. Haque, T. Maruyama, H. Yagi, T. Sano, D. Plumwongrot and S. Arai, "Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers," IEEE J. Quantum Electron., vol. 40, no. 9, pp. 1344-1351, Sep. 2004.
  30. H. Yagi, T. Sano, K. Ohira, D. Plumwongrot, T. Maruyama, A. Haque, S. Tamura and S. Arai, "GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes," Jpn. J. Appl. Phys., vol. 43, no. 6A, pp. 3401-3409, Jun. 2004.
  31. A. Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, "Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers," J. Appl. Phys., vol. 94, no. 3, pp. 2018-2023, Aug. 2003.
  32. H. Yagi, T. Sano, K. Ohira, T. Maruyama, A. Haque and S. Arai, "Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method," Jpn. J. Appl. Phys., vol. 42, no. 7A, pp. L748-L750, Jul. 2003.
  33. T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, A. Haque and S. Arai, "Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth," Jpn. J. Appl. Phys., vol. 42, no. 6A, pp. 3471-3472, Jun. 2003.
  34. T. Maruyama, N. Nakamura and M. Watanabe, "Epitaxial growth of BeZnSe on CaF2/Si(111) substrate," Jpn. J. Appl. Phys., vol. 41, no. 8A, pp. L876-L877, Aug. 2002.
  35. Y. Niiyama, T. Maruyama, N. Nakamura and M. Watanabe, "Room-temperature ultraviolet photoluminescence of BeZnSe on GaP(001)," Jpn. J. Appl. Phys., vol. 41, no. 7A, pp. L751-L753, Jul. 2002.
  36. T. Maruyama, N. Nakamura and M. Watanabe, "Theoretical analysis of the threshold current density in BeMgZnSe quantum well ultra-violet lasers," Jpn. J. Appl. Phys., vol. 40, no. 12, pp. 6872-6873, Dec. 2001.
  37. T. Maruyama, N. Nakamura and M. Watanabe, "Improvement of the visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2 on Si(111) substrate prepared by rapid thermal anneal," Jpn. J. Appl. Phys., vol. 39, no. 4B, pp. 1996-2000, Apr. 2000.
  38. M. Watanabe, T. Maruyama and S. Ikeda, "Ligth emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): Effect of rapid thermal annealing," J. Luminescence, vol. 80, no. 1-4, pp. 253-256, Dec. 1999.
  39. B. Y. Zhang, K. Furuya, Y. Ikeda, N. Kikegawa, M. Watanabe and T. Maruyama "Theoretical and experimental charac-terizations of hot electron emission of n-Si/CaF2/Au emitter used in hot electron detection experimen," Physica B, vol. 272, no. 1-4, pp. 425-427, Dec. 1999.
  40. T. Maruyama, N. Nakamura and M. Watanabe, "Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2/Si(111) with rapid thermal anneal," Jpn. J. Appl. Phys., vol. 38, no. 8B, pp.L904-L906, Aug. 1999.
  41. M. Watanabe, T. Matsunuma, T. Maruyama and Y. Maeda, "Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si(111)," Jpn. J. Appl. Phys., vol. 37, no. 5B, pp. L591-L593, May 1998.
  42. W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada, "Reduction of electrical resistance of nanometer-thick CoSi2 film on CaF2," Jpn. J. Appl. Phys., vol. 36, no. 7A, pp. 4470-4471, Jul. 1997.
  43. F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe, M. Asada, "Detection of hot electron current with scanning hot electron microscopy," Appl. Phys. Lett., vol. 69, no. 15, pp. 2196-2198, Dec. 1996.

受賞・助成など

研究代表者

  • 科学研究費補助金 基盤研究C 「CMOSプロセスを用いた超高速シリコンモノリシック光レシーバの開発」 (2015年4月-2017年3月)
  • JST 研究成果最適展開支援プログラム（A-STEP）探索タイプ 「LSI標準プロセスによる超高速光検出器の低電圧動作化」(2012年11月)
  • 平成24年度北陸地区国立大学学術研究連携支援 「高効率・多機能な有機EL素子の開発」(継続)(2012年7月)
  • 科学研究費補助金 若手研究B 「アモルファス/結晶ハイブリッド型シリコン光集積回路」 (2012年4月-2014年3月)
  • 平成23年度北陸地区国立大学学術研究連携支援 「高効率・多機能な有機EL素子の開発」(2011年7月)
  • 平成22年度金沢大学と北陸先端科学技術大学院大学との教育研究活動の支援 「電子ビーム露光を用いたシリコン光機能回路」(2010年7月)
  • 平成21年度金沢大学と北陸先端科学技術大学院大学との教育研究活動の支援 「電子ビーム露光を用いたシリコン光機能回路」(2009年7月)
  • (財)マツダ財団 第25回 マツダ研究助成 「次世代LSI光インターコネクション用光検出器に関する研究」(2008年9月)
  • (財)安藤研究所 第21回 安藤博記念学術奨励賞 「次世代ＬＳＩグローバル光配線用半導体レーザに関する研究」(2008年6月)
  • (財)一樹工業技術奨励会 「熱圧着技術を利用したシリコン基板上次世代LSI光配線用半導体レーザ」(2008年6月)
  • 科学研究費補助金 若手研究B 「SOI導波路上単一モード半導体薄膜レーザに関する研究」 (2007年4月-2009年3月)
  • (財)服部報公会 工学研究奨励援助 「量子閉じ込めと高屈折率差光閉じ込めを用いる半導体薄膜光機能素子に関する研究」(2006年9月)
  • 科学研究費補助金 若手研究B 「薄膜半導体光導波路を有する低次元量子井戸レーザに関する研究」 (2005年4月-2007年3月)
  • 東工大電気・情報系COE21「フォトニクスナノデバイス集積工学研究拠点」若手研究者研究助成 (2003年1月)
  • (財)理工学振興会 工学に関する研究の助成および研究者の養成援助 (2000年1月)

研究分担者

  • 平成20年度　金沢大学 重点研究経費（学長戦略経費）「マイクロ波から光領域での物理探求とデバイス開発」(2008、2009年度)
  • 科学研究費補助金 特別推進研究「Si系LSI内広帯域配線層の為のInP系メンブレン光・電子デバイス」(2007年4月-2012年3月)
  • 科学研究補助金 基盤研究A 「量子ナノ構造を用いる低消費電力・高機能単一波長半導体レーザの研究」(2005年4月-2007年3月)
  • (独)科学技術振興機構 戦略的創造研究推進事業 「低次元量子構造を用いる機能光デバイスの創製」(2002年11月-2007年10月)